Chip Silicon Rectifier
HFM101 thru HFM108
Fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gr am
(V)
(V)
(V)
(V)
(nS)
(
o
C)
HFM101
H11
50
35
50
HFM102
H12
100
70
100
HFM103
H13
200
140
200
HFM104
H14
300
210
300
HFM105
H15
400
280
400
HFM106
H16
600
420
600
HFM107
H17
800
560
800
HFM108
H18
1000
700
1000
-55 to +150
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
T
RR
*5
50
1.0
1.3
70
SYMBOLS
MARKING
CODE
1.85
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
Ambient temperature = 50
o
C
I
O
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
30
A
V
R
= V
RRM
T
A
= 25
o
C
5.0
uA
V
R
= V
RRM
T
A
= 100
o
C
150
uA
Thermal resistance
Junction to ambient
R
q
JA
32
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
20
pF
Storage temperature
T
J
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
PATENT PUBLICATION NO. 37116
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA
.4
.6
.8
1.0
1.2
1.4
.001
.01
.1
1.0
10
RATING AND CHARACTERISTIC CURVES (HFM101 THRU HFM108)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.5-TYPICAL JUNCTION CAPACITANCE
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
D.U.T.
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
Tj=25 C
FIG.2-TYPICAL FORWARD CURRENT
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
0.2
0.4
0.6
0.8
1.0
1.2
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
DERATING CURVE
AMBIENT TEMPERATURE ( C)
1.6 1.8
H
FM
10
6~
H
FM
10
8
H
F
M
1
0
4
~
H
F
M
1
0
5
H
F
M
1
0
1
~
H
F
M
1
0
3
REVERSE VOLTAGE,(V)
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
,
(
p
F
)
175
120
100
80
60
40
20
0
.01 .05 .1 .5 1 5 10 50 100
0
25
50 75 100 125 150 175
0
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
6
0
12
18
24
30
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
R
E
N
T
,
(
A
)
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